通过X射线衍射,DSC和交流阻抗等测试方法研究了镉掺杂Bi2VO5.5的结构,相变和电性能.由于Cd2+的半径与V5+和Bi3+的半径都比较接近,所以在合成BICDVOX体系时假设了两种模型:Bi2V1-xCdxO5.5-3/2x(x=0.05,0.075,0.10,0.125,0.15)和Bi2-xVCdxO5.5-1/2x (x=0.10,0.20).XRD和DSC分析表明了这两种模型可能同时存在.根据交流阻抗谱的结果,当x=0.10时,具有较高的电导率,这归因于此成分使高电导的四方相可以稳定到室温.
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