材料期刊网

We report on the longitudinal (in-plane resistivity rho(ab)) and the transverse (Hall coefficient R-H) transport measurements of La1.6-xNd0.4SrxCuO4 epitaxial films (x=0.08,0.1,0.12,0.14,0.16) grown by an off-axis magnetron sputtering method. It is found that the resistivity jump corresponding to the structural phase transition from low-temperature orthorhombic (LTO) to low-temperature tetragonal (LTT) phase observed in the bulk crystals disappears in the films. All of the films on LaSrAlO4 (LSAO) substrate show the log(1/T) insulating behavior above T-c. The R-H peak broadening together with the LTT phase suppression suggests that the static charge stripes disappear in the films. From these experimental results, one can regard that the nonuniform localization of charge carriers in La1.6-xNd0.4SrxCuO4 films on LSAO, possibly in the form of dynamic stripes, should be responsible for the deviation of the Hall angle cot theta(H) from T-2 law below the metal-insulator crossover temperature T-MI.