利用自行研制的可调谐圆柱谐振腔式微波等离子体化学气相沉积(MPCVD)装置的结构优势,设计了电极可调节的偏压加强MPCVD装置.采用脉冲激光沉积(PLD)法制备了Ir(100)/MgO (100)基片.采用偏压加强MPCVD装置进行了金刚石异质外延形核的探索,在Ir(100)/MgO (100)基片上实现了金刚石异质外延形核.扫描电镜结果显示,[100]取向的金字塔状外延金刚石晶粒的形核密度达108～109 cm-2.
参考文献
| [1] | Tallaire, A.;Achard, J.;Silva, F.;Brinza, O.;Gicquel, A. .Growth of large size diamond single crystals by plasma assisted chemical vapour deposition: Recent achievements and remaining challenges[J].Comptes rendus. Physique,2013(2/3):169-184. |
| [2] | T. Saito;S. Tsuruga;N. Ohya;K. Kusakabe;S. Morooka;H. Maeda;A. Sawabe;K. Suzuki .Epitaxial nucleation of diamond on an iridium substrate by bias treatment, for microwave plasma-assisted chemical vapor deposition[J].Diamond and Related Materials,1998(9):1381-1384. |
| [3] | Murari Regmi;Karren More;Gyula Eres.A narrow biasing window for high density diamond nucleation on Ir/YSZ/Si(100) using microwave plasma chemical vapor deposition[J].Diamond and Related Materials,2012:28-33. |
| [4] | Kazuhiro Suzuki;Hideo Fukuda;Takatoshi Yamada .Epitaxially grown free-standing diamond platelet[J].Diamond and Related Materials,2001(12):2153-2156. |
| [5] | T. Bauer;S. Gsell;M. Schreck .Growth of epitaxial diamond on silicon via iridium/SrTiO_3 buffer layers[J].Diamond and Related Materials,2005(3/7):314-317. |
| [6] | 王传新,汪建华,满卫东,马志斌,王生高,康志成.金刚石薄膜异质外延的研究进展[J].真空与低温,2002(02):71-76. |
| [7] | 王蜀霞.Si（100）上异质外延金刚石膜生长及其应用研究[J].稀有金属材料与工程,2001(06):440-443. |
| [8] | F Silva;K Hassouni;X Bonnin;A Gicquel .Microwave engineering of plasma-assisted CVD reactors for diamond deposition[J].Journal of Physics. Condensed Matter,2009(36):364202-16. |
| [9] | X.J. Li;W.Z. Tang;S.W. Yu .Design of novel plasma reactor for diamond film deposition[J].Diamond and Related Materials,2011(4):480-484. |
| [10] | 张亦文,李效民,赵俊亮,于伟东,高相东,吴峰.脉冲激光沉积法生长In掺杂SrTiO3薄膜及其微观结构研究[J].无机材料学报,2008(03):531-534. |
| [11] | toyokatsu Fujisaki;Minoru Tachiki;Norikazu Taniyama;Minoru Kudo;Hiroshi Kawarada .Fabrication of heteroepitaxial diamond thin films on Ir(001)/MgO(001) substrates using antenna-edge-type microwave plasma-assisted chemical vapor deposition[J].Diamond and Related Materials,2002(3-6):478-481. |
| [12] | Schreck M.;Stritzker B.;Thurer KH. .LIMITATIONS OF THE PROCESS WINDOW FOR THE BIAS ENHANCED NUCLEATION OF HETEROEPITAXIAL DIAMOND FILMS ON SILICON IN THE TIME DOMAIN[J].Journal of Applied Physics,1997(7):3092-3095. |
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