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采用射频磁控溅射用x=0.00～0.45的MgxZn1-xO陶瓷靶在Si（100）和石英衬底上生长一系列的MgxZn1-xO薄膜。用XRD、XPS、透射谱和光电导谱对样品进行表征。结果表明用MgxZn1-xO薄膜在x≤0.325时具有单一（002）取向的六方结构,其禁带宽度Eg随x增加而增大,在薄膜表面入射光能量大于禁带宽度时有光电响应,并且在x=0.325时得到了禁带宽度为4.90eV的MgxZn1-xO薄膜。在x≥0.40时出现立方相结构,禁带宽度有所减小,说明此时已为混相薄膜。

A series of MgxZn1-xO thin films have been grown by radio frequency magnetron sputtering on Si（100） substrates and quartz substrates which used MgxZn1-xO target.The thin films were characterized with X-ray diffraction spectrum（XRD）,electron spectroscopy for chemical analysis（XPS）,transmission spectrum and photoconduction spectrum.The XRD result shown that MgxZn1-xO thin films only has a high diffraction peak of（002） of the hexagonal structure and the diffraction peak angle shift to larger angle with x increased when x≤0.325.They have a mixed hexagonal and cubic phase for MgxZn1-xO films when x≥0.40.From XPS patterns,found that MgxZn1-xO thin films were single hexagonal structure when x was 0.325.From transmission spectrum,can found that all the MgxZn1-xO thin films high transmittance.By the calculation of the MgxZn1-xO thin films absorption edges,we found the band gap energy were enlarged with x increased when x≤0.325.When x≥0.40,the band gap energy were decreased with x increased.All the MgxZn1-xO thin films have high photoresponse in ultraviolet band.The inflexions of photocurrent response curves were shift to blue with x increased when x≤0.325,it shown that the band gap energy were enlarged with x increased.We also found that the band gap energy was 4.9eV when x was 0.325;this gap energy was in the solar blind.