采用化学气相沉积方法,在硅衬底上合成了In2O3(ZnO)m超晶格纳米线.扫描电镜的测试结果表明,纳米线的直径和长度分别在80～100 nm和15～25 μm之间.透射电镜图像显示,In-O层与In/Zn-O block沿纳米线生长方向〈0001〉交替堆垛.在不同温度下对样品进行退火并利用拉曼散射技术对处理后的样品进行研究.研究结果发现随退火温度的提高,材料中的VO和Zni减少,AM模和A1(LO)模的逐渐频移到571 cm-1和619 cm-1位置,峰型对称性增强,即退火使In2O3(ZnO)m超晶格纳米线的晶体质量明显提高.最佳的退火温度为1000℃.
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