室温下,将能量为60 keV,剂量范围在1×1016～1×1017/cm2的Ni离子注入到SiO2中.随后将样品在Ar气中退火(400 ～ 1000℃).采用原子力显微镜(AFM),掠入射X射线衍射(GXRD),紫外-可见分光光度计(UV-Vis)对退火前后样品的表面形貌,Ni纳米颗粒的形成和热演变过程以及样品光吸收性能进行分析表征.结果表明:剂量为1×1016/cm2的样品退火前后均未能形成纳米颗粒;剂量为5×1016/cm2和1×1017/cm2的样品中形成了纳米颗粒,退火后颗粒长大,样品表面凸起(Ni纳米颗粒)高度增加,数量减少.SiO2中Ni纳米颗粒的光吸收带在310～ 520 nm,800℃后光吸收带变得明显且伴随峰位蓝移.经1000℃退火后,Ni纳米颗粒被热分解的O氧化为NiO纳米颗粒,NiO纳米颗粒的光吸收带位于300 nm附近.
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