GaN基发光二极管研究进展

中国材料进展, 2009, 28(7): 16-19.

GaN基发光二极管研究进展

邢志刚 ^1, , 贾海强 ^2, , 王文新 ^3, , 陈弘 ^4,

1.中国科学院物理研究所清洁能源实验室,北京,100190

2.中国科学院物理研究所清洁能源实验室,北京,100190

3.中国科学院物理研究所清洁能源实验室,北京,100190

4.中国科学院物理研究所清洁能源实验室,北京,100190

关键词：发光二极管 , 氮化镓 , 晶体生长

Progress in Research of GaN-Based Light-Emitting Diodes

GaN基发光二极管(LED)作为目前固态照明和显示等应用中最核心的器件,在完全发挥材料性能的道路上还存在着一些困难.针对蓝光LED内量子效率低和白光LED应用中缺乏简易制备方法的现状,本研究组做出了有意义的富有创新性的工作:提出的宽窄耦合量子阱结构的LED使得蓝光LED的内量子效率得到了很大的提高;通过生长一个用于调节量子阱中的应变和局域化的InGaN插入层,制备出了同一发光层出射白光的单芯片白光LED.

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材料期刊网

GaN基发光二极管研究进展

Progress in Research of GaN-Based Light-Emitting Diodes

参考文献