利用单圈内置式ICP-CVD方法在室温下制备了Si薄膜.在拉曼光谱、原子力显微镜(AFM)对样品结构分析的基础上,采用对样品结构无损伤的椭圆偏振光谱(SE)法对样品进行了测量,结合有效介质近似(EMA)模型,对样品的微结构进行了计算拟合.拉曼光谱及AFM分析表明:样品为具有纳米晶相的Si薄膜;分光椭圆偏振法结合EMA模型对样品微结构的拟合分析得出了同样的结论,说明即使在室温下用ICP-CVD也获得了具有纳米晶相的Si薄膜,薄膜微结构与源气体SiH4浓度有密切关系.说明分光椭圆偏振法是研究薄膜材料的一种有力手段.
参考文献
[1] | Gruska B .[J].Thin Solid Films,2000,364(01):138. |
[2] | Petrik P.;Lohner T.;Berger R.;Biro LP.;Schneider C.;Gyulai J.;Ryssel H.;Fried M. .Comparative study of polysilicon-on-oxide using spectroscopic ellipsometry, atomic force microscopy, and transmission electron microscopy[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1998(0):259-263. |
[3] | Petrik P;Lehnert W;Schneider C et al.[J].Thin Solid Films,2001,383:235. |
[4] | Goshima K;Toyoda H;Kojima T et al.[J].Japanese Journal of Applied Physics,1999,38(6A):3655. |
[5] | Sakuma Y;Haiping L;Shirai H .[J].Vacuum,2000,59(01):266. |
[6] | Bruggeman D A .[J].Annals of Physics(Leipzig),1935,24:636. |
[7] | Jellison G E;Chisholm M F;Gorbatkin S M .[J].Applied Physics Letters,1993,62(25):3348. |
[8] | Hamma S.;Cabarrocas PRI. .Low-temperature growth of thick intrinsic and ultrathin phosphorous or boron-doped microcrystalline silicon films: Optimum crystalline fractions for solar cell applications[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(3):217-239. |
[9] | 王晓强,栗军帅,陈强,祁菁,尹旻,贺德衍.电感耦合等离子体CVD低温生长硅薄膜过程中的铝诱导晶化[J].物理学报,2005(01):269-273. |
[10] | Haberland K.;Kaluza A.;Zorn M.;Pristovsek M.;Hardtdegen H.;Weyers M. Zettler JT.;Richter W. .Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE[J].Journal of Crystal Growth,2002(1/2):87-97. |
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