利用直流磁控反应式共溅射方法制备了GaN:Tb薄膜. XRD结果显示,该薄膜为纳米晶结构,根据Scherrer公式,计算得到了GaN薄膜晶粒的平均大小为4.8 nm; 紫外可见谱表明在可见光区薄膜的平均透过率大于75%,同时利用Tauc公式计算得到了薄膜的光学带隙为3.07 eV; 测量了薄膜的室温光致发光谱,获得了Tb3+在可见光区(位于497.0,552.4,594.2以及627.8 nm)的本征发光.
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