薄膜硅/晶体硅异质结(HIT)太阳电池是界面器件,其界面性质直接决定器件的性能.本文采用简化的RCA清洗并结合氧化膜保护工艺对硅片进行前期处理；采用等离子体增强化学气相沉积技术(PECVD)制备薄膜硅/晶体硅异质结；通过光发射谱(OES)研究了PECVD在不同的匹配速度下起辉基元浓度随时间的变化,证实了基元浓度的不稳定对电池界面性质有一定的影响；分析了退火工艺对异质结的界面特性的影响,在10-4 Pa量级的背景真空和200℃下进行退火,可显著提高电池开路电压Voc和填充因子FF.本文结果表明:硅片前期处理的氧化膜保护工艺及后退火处理,皆可明显地改善HIT电池的界面性质、提高电池的转换效率.
参考文献
| [1] | Angermann H;Rappich J;Korte L;Sieber I;Conrad E;Schmidt M;Hubener K;Polte J;Hauschild J .Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2008(12):3615-3625. |
| [2] | H. Angermann .Passivation Of Structured P-type Silicon Interfaces: Effect Of Surface Morphology And Wet-chemical Pre-treatment[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2008(24):8067-8074. |
| [3] | H. Angermann;E. Conrad;L. Korte .Passivation of textured substrates for a-Si:H/c-Si hetero-junction solar cells: Effect of wet-chemical smoothing and intrinsic a-Si:H interlayer[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2009(1/3):219-223. |
| [4] | van den Donker MN;Kilper T;Grunsky D;Rech B;Houben L;Kessels WMM;de Sanden MCMV .Microcrystalline silicon deposition: Process stability and process control[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(19):7455-7459. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%