利用金相显微镜和微区红外测量技术分析热处理对液封直拉法生长的大直径半绝缘砷化镓（LECSI-GaAs）单晶中深施主缺陷EL2的影响。结果表明，原生大直径SI—GaAs样品中EL2缺陷浓度沿直径方向的分布呈现中心区域较高、近中心区域最低、边缘区域最高的特点。500℃退火EL2缺陷浓度稳定，真空闭管并快速冷却条件下850℃以上退火时，EL2缺陷浓度随温度升高而下降。并分析了热处理对EL2缺陷的影响机理。
Effect of annealing treatment on deep donor defect EL2 in large diameter LEC SI-GaAs was investigated by micro-region infrared measurement and metallurgical microscope. The results show that the profile of EL2 concentration is lower in the near center area, higher in center and the highest in lateral. The EL2 concentration is stable after annealing at 500 ~C and decreases with increasing of temperature for annealing at temperature higher than 850 ~C in the condition of closed vacuum tube and rapid cooling. The affecting mechanism of annealing on EL2 defect is analyzed.
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