利用AFM、XRD、TEM、紫外可见光谱仪和椭偏仪等多种研究手段研究了ZnS-SiO2薄膜的性能.研究表明,沉积态ZnS-SiO2薄膜为非晶态,表现为层核生长型(Straski-Krastanov型)结构,表面很平滑,其中包含着大小为2-10nm的微小晶粒;ZnS-SiO2薄膜的透过率比较大,消光系数很小,这可以减少入射激光能量的损失;ZnS-SiO2薄膜拥有比较高的折射率,能够对记录层起到很好的保护作用.
The characteristics of ZnS-SiO_2 dielectric film were studied by using AFM, XRD, TEM, UV/Vis/NIR
spectrometer, and spectroscopic ellipsometer methods. It was indicated that the as-deposited ZnS-SiO2 film is amorphous and has Straski-Krastanov type
growth characteristic. The surface of the ZnS-SiO2 film is very smooth. The grain size of the ZnS-SiO2 film is very small, around 2～10nm. The
transmissivity of the ZnS-SiO2 film is large and the extinction coefficient is very small, which are beneficial to reduce the loss of laser power. The
refractive index of the ZnS-SiO2 film is large and the recording layer can be protected very well.
参考文献
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