用热蒸发化学气相沉积法成功制备了β-Ga2O3纳米材料,并研究了该纳米材料在高温下的电学特性.X射线衍射分析显示,产物为单斜结构的-Ga2O3.扫描电子显微镜及透射电镜测试表明,纳米带的宽度小于100 nm,长度有几微米;较大氧流量时制备出β-Ga2O3纳米晶粒结构,晶粒尺度在80～150 nm.电学特性的测试表明:当温度低于800℃时,纳米带电导率几乎不变,当温度高于800℃以上时,电导率和温度呈指数关系.
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