采用溶胶-凝胶工艺(Sol-Gel)在Pt/Ti/SiO2/p-Si衬底上成功制备了低漏电流Bi4Ti3O12(BIT)铁电薄膜,对所得样品的漏导行为进行了研究.研究表明,Bi4Ti3O12薄膜的漏电流密度在+3V偏压下低于10-9A/cm2,满足器件应用的要求.在不同场强下薄膜的漏导机制不同,而且正向和负向电场作用下I-V曲线明显不同,正向漏电流明显小于负向漏电流.电压低于2V时,薄膜以欧姆导电机制为主,电压在2～5.4V(加正向电压)或2.2～3.6V(加负向电压)时,BIT薄膜应以Schottky emission导电机制为主;而对于较高的场强下,BIT薄膜以Space-charge limited currents(SCLC)导电机制为主.
参考文献
| [1] | Ramesh R.Thin Film Ferroelectric Materials and Devices[M].Kluwer Academic,Dordrecht,1997:199. |
| [2] | Avciello O;Ramesh R .Laser-ablation deposition and Characterization of Ferroelectric Capacitors for Nonvolatile Memories[J].MRS Bulletin,1996,211:31-36. |
| [3] | Okamura;Yagi S;Mori Y;Kakimi K,Ando A,Tsukamoto S.Improvement in fatigue properties of ferroelectrc Bi4Ti3O12 thin films by heat treatment in O2 gas at high pressure[A].,1996:18-21. |
| [4] | Yang Qunbao;Li Yongxiang;Yin Qingrui;Wang Peiling Cheng Yibing .Bi4Ti3O12 Nanoparticles prepared by Hydrothermal Synthesis[J].Journal of the European Ceramic Society,2003,23:161-166. |
| [5] | Watanabe T.;Saito K.;Funakubo H. .Orientation of Bi4Ti3O12-based ferroelectric thin films prepared on various kinds of substrates by metalorganic chemical vapor deposition[J].Journal of Crystal Growth,2002(1/4):389-393. |
| [6] | Kong L B;Ma J;Zhu W;Tan O K .Preparation of Bi4Ti3O12 ceramics via a high-energy ball milling process[J].Materials Letters,2001,51:108-114. |
| [7] | 王华.Si基Bi4Ti3O12铁电薄膜的制备与特性研究[J].物理学报,2004(04):1265-1270. |
| [8] | Wang Hua;Yu Jun;Zhou WenLi et al.Characteristics of Pb(Zr0.52Ti0.48)O3 Thin film on p-Si with a Buffer Layer of Bi4Ti3O12 Prepared by Pulsed Laser Deposition[J].Japanese Journal of Applied Physics,2001,40(3A):1388-1390. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%