SiC掺杂MgB_2体系由于其优异的超导性能而受到普遍关注并成为超导领域中一大研究热点,但是目前的研究大多集中在SiC对MgB_2超导性能的影响上,对SiC的加入对MgB_2烧结过程的影响研究很少,本文结合差热分析和物相鉴定,系统研究了SiC掺杂MgB_2体系的烧结过程,并在此基础上探究了其反应动力学机理.结果表明,在烧结过程中Mg先和B发生反应,随着温度的升高在Mg和B还没有反应完全的时候SiC和Mg继而开始反应,反应动力学分析表明该体系的固相反应阶段为相界面控制反应过程,其表观活化能为547. 5KJ/mol,指前因子为5. 76×10~(15) min~(-1).
The SiC-doped MgB_2 superconductor has been a hot spot in superconducting field due to its excellent superconductive properties. However, the previous studies mainly focused on the superconductive properties of SiCdoped MgB_2 and rarely explored its sintering process. Combined with the thermal analysis and phase identification,we investigated the sintering process of SiC-doped MgB_2 samples. Furthermore, the Kinetics of the sintering process was also discussed. The results indicated that the reaction between Mg and B firstly occurred and then the reaction between Mg and SiC started during the sintering process. The sintering process of the SiC-doped MgB_2 was attributed to a solid-state interface-reaction controlled mechanism with an apparent activation energy of 547. 5 kJ/mol and a pre-exponential factor of 5. 76 ×10~(15) min~(-1).
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