利用化学溶液沉积法在Pt/Ti/SiO2/Si (100)基底和700℃条件下分别制备了Nd和Mg (不同浓度)共掺杂的钛酸铋薄膜Bi3．15Nd0．85Ti(3-x)Mg2xO12(BNTM)(x=0．00,0．06,0．10和0．14),并进行了这一系列薄膜的包括微结构、介电、铁电和漏电流等特性的研究和对比。发现当Mg含量为x=0．10时,薄膜具有较高的剩余极化强度(2Pr=33．40μC/cm2)和介电常数(ε=538,频率为1kHz),其漏电流密度为10-8A/cm2。讨论了相关的物理机制。
A series of Nd and Mg cosubstituted bismuth titanate films of Bi3. 15 Nd0. 85 Ti(3-x) Mg2x O12 ( x=0. 00, 0. 06,0. 10 and 0. 14)have been prepared on Pt/Ti/SiO2/Si(100)substrates at 700℃ by a chemical solution depo-sition technique,respectively. The structural evolution and ferroelectric properties of the as-deposited films were systematically investigated as a function of Mg composition x. It was found that an optimized Mg content,x=0. 10, can greatly enhance the remnant polarization(2Pr=33. 40μC/cm2)and the dielectric constants(ε=538 at the fre-quency of 1kHz)of the as-deposited films,while the leakage current was 10 -8A/cm2. The relevant physical mecha-nisms were discussed.
参考文献
| [1] | Scott J F;Araujo C A .Ferroelectric Memories[J].SCIENCE,1989,246(4936):1400-1405. |
| [2] | Bauer S. .POLED POLYMERS FOR SENSORS AND PHOTONIC APPLICATIONS [Review][J].Journal of Applied Physics,1996(10):5531-5558. |
| [3] | Smela E;Inganas O;Lundstrom I .CONTROLLED FOLDING OF MICROMETER-SIZE STRUCTURES[J].Science,1995(5218):1735-1738. |
| [4] | Park B H;Kang B S;Bu S D et al.Lanthanum-substituted bismuth titanate for use in non-volatile memories[J].NATURE,1999,401:682-684. |
| [5] | Y. Shimakawa;Y. Kubo;Y. Tauchi;H. Asano;T. Kamiyama;F. Izumi;Z. Hiroi .Crystal and electronic structures of Bi_(4-x)La_(x)Ti_(3)O_(12) ferroelectric materials[J].Applied physics letters,2001(17):2791-2793. |
| [6] | Chu M W;Ganne M;Caldes M T et al.X-ray photoelectron spectroscopy and high-resolution electron microscopy studies of Aurivillius com-pounds[J].Journal of Applied Physics,2002,91:3178-3187. |
| [7] | Ho Nyung Lee;Dietrich Hesse .Anisotropic ferroelectric properties of epitaxially twinned Bi_(3.25)La_(0.75)Ti_(3)O_(12) thin films grown with three different orientations[J].Applied physics letters,2002(6):1040-1042. |
| [8] | Noguchi YJ.;Goshima Y.;Miyayama M.;Miwa I. .Defect control for large remanent polarization in bismuth titanate ferroelectrics doping effect of higher-valent cations[J].Japanese journal of applied physics,2000(12B):L1259-L1262. |
| [9] | Kim JK.;Kim J.;Song TK.;Kim SS. .Effects of niobium doping on microstructures and ferroelectric properties of bismuth titanate ferroelectric thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1/2):225-229. |
| [10] | Electromechanical properties of Nd-doped Bi_(4)Ti_(3)O_(12) films: A candidate for lead-free thin-film piezoelectrics[J].Applied physics letters,2003(11):1760-1762. |
| [11] | Uong Chon;Ki-Bum Kim;Hyun M. Jang;Gyu-Chul Yi .Fatigue-free samarium-modified bismuth titanate (Bi_(4-x)Sm_(x)Ti_(3)O_(12)) film capacitors having large spontaneous polarizations[J].Applied physics letters,2001(19):3137-3139. |
| [12] | Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate[J].Journal of Applied Physics,2003(8):4769-4775. |
| [13] | Yuji Noguchi;Masaru Miyayama .Large remanent polarization of vanadium-doped Bi_(4)Ti_(3)O_(12)[J].Applied physics letters,2001(13):1903-1905. |
| [14] | Sun C L;Chen S Y;Chen S B et al.Effect of annealing temperature on physical and electrical properties of Bi3. 25 La0. 75 Ti3 O12 thin films on Al2 O3-buffered Si[J].Applied Physics Letters,2002,80:1984-1986. |
| [15] | Hu XB;Garg A;Barber ZH .Structural and electrical properties of samarium-substituted bismuth titanate ferroelectric thin films on Pt/TiO,/SiO2/Si substrates[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2005(1/2):188-195. |
| [16] | Zhong X L;Wang J B;Liao M et al.Ferroelec-tric and dielectric properties Nd/Zr cosubstituted Bi4 Ti3 O12 thin films[J].Applied Physics Letters,2007,90(10):102906-102908. |
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