采用真空热蒸发法技术制备CdSe薄膜,通过XRD、SEM、Hall效应和分光光度计测试了薄膜的结构、表面形貌、I-V特性和光学透过率.结果表明:CdSe薄膜(100)晶面的面间距为0.369 nm,晶粒大小约为10.2 nm,薄膜表面晶粒分布较为均匀；CdSe薄膜与锡和银的肖特基势垒高度分别为0.76V和0.69V；CdSe薄膜的光透过率在远红外区较高,且呈上升趋势；折射率随波长增加按指数规律减小；根据Tauc关系和Urbach规则,获得能量带隙为1.79 eV和Urbach能量为0.217 eV.
参考文献
| [1] | Thanikaikarasan, S.;Shajan, X.S.;Dhanasekaran, V.;Mahalingam, T. .X-ray line broadening and photoelectrochemical studies on CdSe thin films[J].Journal of Materials Science,2011(11):4034-4045. |
| [2] | Saaminathan V;Murali KR .Importance of pulse reversal effect of CdSe thin films for optoelectronic devices[J].Journal of Crystal Growth,2005(3/4):229-240. |
| [3] | T.S. Shyju;S. Anandhi;R. Indirajith;R. Gopalakrishnan .Solvothermal synthesis, deposition and characterization of cadmium selenide (CdSe) thin films by thermal evaporation technique[J].Journal of Crystal Growth,2011(1):38-45. |
| [4] | PRADIP KR. KALITA;B K SARMA;H L DAS .Space charge limited conduction in CdSe thin films[J].Bulletin of Materials Science,2003(6):613-617. |
| [5] | Sarmah K;Sarma R;Das H L .Structural Characterization of Thermaally Evaporated CdSe Thin Films[J].Chalcogenide Letters,2008,5(08):153-163. |
| [6] | Matsumura N;Ueda J;Saraie J .Molecular Bean Epitaxial Growth of Hexagonal CdSe and ZnCdSe on Cubic GaAs(111)B Substrates[J].Japanese Journal of Applied Physics,2000,39(10B):1026-1028. |
| [7] | Shizuo F;Wu Y H;Yoichi K et al.Metalorganic Molecular Beam Epitaxial Growth and Characterization of CdSe/ZnSe Strained-layer Single Quantum Wells and Superlattices on GaAs Substrates[J].Journal of Applied Physics,1992,72(1 1):5233-5239. |
| [8] | Perna G;Capozzi V;Ambrico M et al.Structural and Optical Characterization of Zn Doped CdSe Filma[J].Applied Surface Science,2004,233(1-4):366-372. |
| [9] | 黄平,李婧,梁建,赵君芙,马淑芳,许并社.CdSe薄膜的制备及性能表征[J].人工晶体学报,2011(01):60-65. |
| [10] | Yadav A A;Barote M A;Masumdar E U .Studies on Cadmium Selenide (CdSe) Thin Films Deposited by Spray Pyrolysis[J].Materials Chemistry and Physics,2010,121(1-2):53-57. |
| [11] | R B Kale;S D Sartale;B K Chougule;C D Lokhande .Growth and characterization of nanocrystalline CdSe thin films deposited by the successive ionic layer adsorption and reaction method[J].Semiconductor Science and Technology,2004(8):980-986. |
| [12] | T. Mahalingam;S.Thanikaikarasan;V. Dhanasekaran .Electrochemical deposition and studies on CdCr_2S_4 thin films[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2010(1/3):249-252. |
| [13] | Panchal CJ;Desai MS;Kheraj VA;Patel KJ;Padha N .Barrier inhomogeneities in Au/CdSe thin film Schottky diodes[J].Semiconductor Science and Technology,2008(1):15003-1-15003-6-0. |
| [14] | Manifacier J C;Gasiot J;Fillard J P .A Simple Method for the Determinstion ofthe Optical Constants n,k and theThickness of a Weakly Absorbing Thin Film[J].Journal of Physics E:Scidentific Instruments,1976,9(11):1002-1004. |
| [15] | 赵湘辉,魏爱香,招瑜.CdS纳米晶颗粒薄膜的制备及其光学特性研究[J].人工晶体学报,2011(06):1580-1586. |
| [16] | 黄凯,吕建国,刘先松,唐震.溶胶-凝胶法制备Mg掺杂ZnO薄膜的微结构与光学性质[J].人工晶体学报,2010(05):1171-1175. |
| [17] | Kale RB;Lokhande CD .Band gap shift, structural characterization and phase transformation of CdSe thin films from nanocrystalline cubic to nanorod hexagonal on air annealing[J].Semiconductor Science and Technology,2005(1):1-9. |
| [18] | S. Zaynobidinov;R. G. Ikramov;R. M. Jalalov .URBACH ENERGY AND THE TAILS OF THE DENSITY OF STATES IN AMORPHOUS SEMICONDUCTORS[J].Journal of Applied Spectroscopy,2011(2):223-227. |
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