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用XRD、SEM手段分析了共沉淀工艺和水热合成技术制备的半导体SnO2纳米晶态粉体及其厚膜陶瓷材料的显微结构,结果表明两种粉体的晶粒尺寸大约7nm,但两种粉体的XRD照片差异较大.用水热合成技术制备的粉体其颗粒是由纳米晶粒团聚而成,颗粒尺寸大约300nm左右,具有较大的表面活性,而用共沉淀工艺制备的粉体,颗粒分布较宽,活性差.两种粉体的显微结构对厚膜陶瓷材料显微结构的形成和SnO2厚膜气敏传感器选择性、灵敏度和稳定性有着显著的影响.

参考文献

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