通过悬浮熔炼方法制备了Y1-x Tix NiSb(x=0,0.015,0.02,0.025)材料并研究了Ti掺杂对材料热电性能的影响.经过孔隙率修正后,Ti掺杂样品的热导率和电导率均比未掺杂样品要低,并且随着Ti含量的增加呈现先下降后上升的趋势.分析发现Ti掺杂后样品热导率的降低是由于电子热导率的下降所致,电子载流子的引入则导致了电导率的下降.Ti掺杂后样品Seebeck系数在室温下有变负趋势,表明材料在室温下可能呈现N型传导特性.最终,Ti掺杂提高了材料的热电性能.Ti含量x=0.015的样品在770K左右获得最大ZT值0.085,与未掺杂样品相比,提高了约60%.
参考文献
| [1] | Larson P.;Sportouch S.;Kanatzidis MG.;Mahanti SD. .Electronic structure of rare-earth nickel pnictides: Narrow-gap thermoelectric materials[J].Physical Review.B.Condensed Matter,1999(24):15660-15668. |
| [2] | Oestreich J.;Probst U.;Richardt F.;Bucher E. .Thermoelectrical properties of the compounds (ScMSb)-Sb-VIII and (YMSb)-Sb-VIII (M-VIII = Ni, Pd, Pt)[J].Journal of Physics. Condensed Matter,2003(4):635-640. |
| [3] | Slade R. Culp;S. Joseph Poon;Nicoleta Hickman;Terry M. Tritt;J. Blumm .Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800℃[J].Applied physics letters,2006(4):042106.1-042106.3. |
| [4] | Yang SH;Zhu TJ;Sun T;Zhang SN;Zhao XB;He J .Nanostructures in high-performance (GeTe)(x)(AgSbTe2)(100-x) thermoelectric materials[J].Nanotechnology,2008(24):245707-1-245707-5-0. |
| [5] | Cao, YQ;Zhu, TJ;Zhao, XB;Zhang, XB;Tu, JP .Nanostructuring and improved performance of ternary Bi-Sb-Te thermoelectric materials[J].Applied physics, A. Materials science & processing,2008(2):321-324. |
| [6] | Cao YQ;Zhu TJ;Zhao XB .Low thermal conductivity and improved figure of merit in fine-grained binary PbTe thermoelectric alloys[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2009(1):015406-1-015406-6-0. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%