用分子束外延法(MBE),在铟锡氧化物(ITO)导电玻璃衬底上生长了ZnSSe薄膜,详细研究了薄膜的光电特性.通过控制反应时的生长参数,制备出了符合紫外液晶光阀设计要求的光导层薄膜.室温下,该薄膜光谱响应截止边的响应度为0.01A/W,紫外/可见光响应对比度大于103.薄膜的暗电阻率随薄膜晶粒增大而减小,在衬底温度为2900C时,所获得的ZnSSe薄膜具有4.3×1011Ω@cm的暗电阻率.频率从40Hz到4000Hz的交流特性测试,也证实该薄膜符合器件紫外成像的工作要求.
The opto-electronic properties of molecular beam epitaxy (MBE)technique grown by ZnSSe thin films on indium-tin-oxide (ITO) glass substrates were investigated. Ultraviolet (UV) photo-responsivity as high as 0.01 A/W and three orders of visible rejection power are demonstrated at room temperature. The results of d.c. resistivity measurements reveal that the dark resistivity of the ZnSSe thin films decreases as the crystal size increases and reaches a value of 4.3× 1011 Ω @ cm for a thin film grown at the optimised substrate temperature, 2900C. The results of a.c. impedance measurements performed in the frequency range of 40Hz to 4000 Hz further indicate that the impedance of this alloy thin film can provide a good matching with the liquid crystal layer of a liquid crystal light valve (LCLV) for UV imaging applications.
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