在ITO导电玻璃基底上,采用二氰二胺分散在DMF(N,N-二甲基甲酰胺)中形成的溶液做沉积液,阴极电化学沉积了CNx薄膜.X射线光电子能谱(XPS)和傅立叶转换红外光谱(FTIR)的分析结果表明,沉积的CNx薄膜的N/C比为0.7左右,碳和氮主要以C-N、C=N的形式成键,有少量的碳和氮以C≡N的形式成键.拉曼光谱测试发现其存在多个吸收峰,对其进行分析的结果表明薄膜样品中含有α-C3N4和β-C3N4相的成分.电阻率测试表明,氮化碳薄膜的电阻率值达到1012～1013Ω·cm.
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