通过实验测量 ｓｏｌ－ｇｅｌ工艺制备的 Ｓｂ掺杂 ＳｎＯ２薄膜载流子浓度、迁移率、电阻率、膜厚，紫外－可见光区透射率、反射率等性质，详细研究了Ｓｂ掺杂ＳｎＯ２薄膜电学与光学性能．实验发现，薄膜具有良好的透光性和较高导电性，膜内载流子浓度高达１０２０ｃｍ－３，电阻率～１０－２Ω·ｃｍ，透光率高达 ９０％，ＳｎＯ２膜禁带宽度 Ｅｇ≈３７～３．８０ｅＶ．
Based on the measurement and analysis of carier concentration ne, mobility μe, electrical resistivity ρ, film thickness d,
refractive index n, transmittance T(λ) and reflectivity R(λ) in ultraviolet-visible range, the eletrical and optical behaviours of Sb-doped SnO2 thin films derived
by sol-gel processing were investigated. The experimental data show that the SnO2 thin films derived by the sol-gel processing have favourable electrical
conductivity and transmittance in visible light range, in which n-type carrier concentration ne reachs to 1020cm-3, electrical resistivity
ρ～10-2Ω．cm, transmittance T～90%, as well as forbiden band gap Eg=3.7～3.8eV.
参考文献
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