采用等离子体增强化学气相沉积(PECVD)法,在玻璃衬底上不同的氢稀释比下低温制备了微晶硅(μc-Si:H)薄膜.利用拉曼(Raman)散射谱研究显示当H2稀释比从95%升高到99%,所得硅膜晶粒大小从2.98 nm增加8.79 nm,晶化率从24%增加到91%;暗电导测试结果从1.32×10-6scm-1增加到7.24×10-3scm-1;沉积速率却大大降低.沉积出的薄膜在进行高温炉退火后,扫描电镜(SEM)显示样品表面孔洞变大增多,推测是氢逸出所致.
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