介绍了一种用于铜膜化学机械抛光的多元胺醇型非离子表面活性剂。研究了该表面活性剂对抛光液表面张力、黏度、粒径、抛光速率和抛光后铜的表面状态的影响。抛光液的基本组成和工艺条件为:SiO20.5%,H2O20.5%,FA/OII 型螯合剂5%(以上均为体积分数),工作压力2 psi,抛头转速60 r/min,抛盘转速65 r/min,抛光液流量150 mL/min,抛光时间3 min,抛光温度21°C。结果表明,微量表面活性剂的加入能显著降低抛光液的表面张力并大幅提高抛光液的稳定性,但对静置24 h后抛光液黏度的影响不大。表面活性剂含量为0%~2%时,随其含量增大,化学机械抛光速率减小,抛光面的粗糙度降低。
A kind of multiple amino alcohol nonionic surfactant applied to the chemical-mechanical polishing of copper film was introduced. The effect of the surfactant on the surface tension, viscosity, particle size, and polishing rate of polishing solution and the surface state of polished copper were studied. The basic composition of polishing solution and process parameters are as follows: SiO2 0.5vol%, H2O2 0.5vol%, FA/OII chelating agent 5vol%, working press 2 psi, rotation rate of polishing head 60 r/min, rotation rate of polishing disc 65 r/min, flow rate of polishing solution 150 mL/min, polishing time 3 min, and polishing temperature 21 °C. The results showed that the addition of a trace amount of surfactant can reduce the surface tension and improve the stability of polishing solution markedly, but has slight impact on the viscosity of polishing solution after storage for 24 h. The chemical-mechanical polishing rate as well as the roughness of polished surface are reduced with the increasing of surfactant content in the range of 0%-2%.
参考文献
[1] | SULYMA C M;ROY D .Electrochemical characterization of surface complexes formed on Cu and Ta in succinic acid based solutions used for chemical mechanical planarization[J].Applied Surface Science,2010,256(08):2583-2595. |
[2] | Seunghee Oh;Jongwon Seok .An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes[J].Wear,2009(7/8):839-849. |
[3] | T.C. Tsai;W.C. Tsao;Welch Lin;C.L. Hsu;C.L. Lin;CM. Hsu;J.F. Lin;C.C. Huang;J.Y. Wu .CMP process development for the via-middle 3D TSV applications at 28 nm technology node[J].Microelectronic engineering,2012(Apr.):29-33. |
[4] | 刘玉岭;檀柏梅;张楷亮.微电子技术工程:材料、工艺与测试[M].北京:电子工业出版社,2004 |
[5] | QUIRK M;SERDA J;韩郑生,.半导体制造技术[M].北京:电子工业出版社,2004 |
[6] | 河北工业大学 .微电子专用螯合剂的使用方法[P].CN 100423202,2008-10-01. |
[7] | 河北工业大学 .超大规模集成电路多层铜布线用化学机械全局平面化抛光液[P].CN 1398938,2003-02-26. |
[8] | Weng,T.;Mishra,A.;Guo,Y.;Wang,Y.;Su,L.;Huang,C.;Zhao,C.;Xiao,X.;Liu,L. .Regulation of lung surfactant secretion by microRNA-150[J].Biochemical and Biophysical Research Communications,2012(4):586-589. |
[9] | Peterson, E.R.;Shearer, M. .Simulation of spreading surfactant on a thin liquid film[J].Applied mathematics and computation,2012(9):5157-5167. |
[10] | Och?dzan-Siod?ak, W.;Dziubek, K.;Siod?ak, D..Densities and viscosities of imidazolium and pyridinium chloroaluminate ionic liquids[J].Journal of Molecular Liquids,2013:85-93. |
[11] | Gharagheizi, F.;Ilani-Kashkouli, P.;Mohammadi, A.H.;Ramjugernath, D.;Richon, D..Development of a group contribution method for determination of viscosity of ionic liquids at atmospheric pressure[J].Chemical Engineering Science,2012:326-333. |
[12] | 王新,刘玉岭,王弘英.Cu-CMP中磨料粒子的机械作用实验分析[J].电子器件,2002(03):220-223. |
[13] | 张磊,汪海波,张泽芳,王良咏,刘卫丽,宋志棠.一种新型复合磨料对铜的化学机械抛光研究[J].功能材料与器件学报,2011(05):520-525. |
[14] | 田雨,王胜利,刘玉岭,刘效岩,邢少川,马迎姿.300mm铜膜低压低磨料CMP表面粗糙度的研究[J].半导体技术,2011(11):836-839. |
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