用光电化学方法研究了Cu在不同浓度NaCl的硼酸--硼砂溶液中的腐蚀以及缓蚀剂聚天冬氨酸(PASP)对Cu的缓蚀作用. Cu在硼酸--硼砂缓冲溶液中, 表面的Cu2O膜为p型半导体. 当Cu所在的溶液中存在少量NaCl (小于0.5 g/L)时, Cu表面Cu2O膜会受轻微Cl-掺杂但不会改变半导体性质; 当溶液中存在较多NaCl (0.5-15 g/L)时, Cu2O膜会受Cl-较严重的侵蚀, Cl-掺杂使Cu2O膜部分转成n型; 当溶液中存在大量NaCl (大于15 g/L)时, Cu$_{2}$O膜完全被Cl-掺杂而转型成n型. 缓蚀剂PASP的加入能够对Cu起到缓蚀作用：当NaCl浓度为2 g/L时, PASP与溶液中的Cl-在Cu表面竞争吸附, 明显抑制了Cl-对Cu2O膜的掺杂, Cu2O受到了保护仍为p型; 在NaCl浓度为30 g/L时, PASP与Cl-竞争吸附只能削弱Cl-对Cu2O膜的掺杂, Cu2O膜仍受Cl-掺杂而转成n型, 但n型性质变弱. 对Cu2O膜性质的Mott-Schottky测试结果与光电化学结果一致.
The corrosion behavior of Cu in different concentration of NaCl and the inhibition of PASP were studied by photoelectrochemical method. The copper electrode in a borax buffer solution showed p-type photoresponse which came from Cu2O layer on its surface. When a little NaCl(<0.5g/L) was added, the Cu2O layer didn’t change its semiconductor style; When more NaCl(0.5-15g/L) was added, a part of the Cu2O layer changed into n-type because of the doping of the Cl- . When a large amount of NaCl(>15g/L) was added, the Cu2O layer totally changed into n-type. When the concentration of NaCl was 2g/L, PASP played a competitive adsorption with Cl- and prevented Cu2O layer from being doped, so the Cu2O layer showed p-type. When the concentration of NaCl was 30g/L, the competitive adsorption of PASP only prevented Cu2O layer from doping slightly, the Cu2O layer still changed into n-type, but the n-type was weakened..
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