介绍了正电子湮没技术在高分子薄膜研究中的最新进展.常规的正电子湮没技术和慢正电子湮没技术,可以准确地探测高分子薄膜微观缺陷(自由体积)尺寸、分数、浓度、深度分布,该测试技术将在研究各种高分子薄膜的微结构-性能关系、表面效应、界面效应等方面发挥积极的作用.
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