硅纳米线阵列是利用太阳能解决能源和环境问题的重要材料,然而,可用于柔性器件和生物相容性器件的柔性硅纳米线阵列的制备方法非常有限.本文通过化学气相沉积,以及高分子转移的方法,成功制备了具有不同高分子层厚度的柔性硅纳米线阵列,并研究了高分子层厚度对柔性硅纳米线阵列光催化性能的影响.结果表明,高分子层厚度越小,柔性硅纳米线阵列的光催化性能越强.因此,利用本文提出的制备方法得到的高分子层厚度低至5 μm的柔性硅纳米线阵列,具有作为高效柔性太阳能电池和全光解水系统光电极的潜力.同时,该研究结果也为设计具有高效光能转换能力的柔性纳米线阵列提供了重要依据.
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