综述了Ti2AlN陶瓷合成技术的研究进展,详细介绍了Ti2AlN的力学性能和电学性能.已见报道的Ti2AlN陶瓷的制备方法有热等静压法和振动致密化反应合成法.以单质Ti,Al,TiN粉为原料,按摩尔比1:1:1称量后混料,用原位热压的方法合成了Ti2AlN多晶块状材料.X射线衍射分析结果表明,当烧结温度为1000℃时,已经开始形成Ti2AlN相,但仍然有很多未反应的TiN和中间产物TiAl;随着烧结温度的提高,Ti2AlN的衍射峰逐渐增强;当烧结温度在1 300℃时,仅有微弱的TiN衍射峰,产物已经近乎纯的Ti2AlN材料.
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