分别采用X光电子能谱(XPS)、俄歇电子能谱(AES)、傅立叶红外光谱(FTIR)以及弹性反冲探测(ERD)等方法,分析了三氯硅烷-氨气-氮气体系低压化学气相沉积(LPCVD)氮化硅(SiNx)薄膜的化学组成,并利用原子力显微镜(AFM)观察了SiNx薄膜的表面形貌.XPS分析结果表明,当原料气中氨气与三氯硅烷的流量之比小于3时获得富Si的SiNx薄膜,当流量之比大于4时获得近化学计量的SiNx薄膜(x=1.33).AES深度分析与XPS分析结果很好地吻合,在835cm-1产生的强红外吸收峰表明Si-N键的形成,ERD分析表明所制备SiNx薄膜中的氢含量很低(1.2at.%).AFM分析结果表明,所沉积的SiNx薄膜均匀、平整,薄膜的均方根粗糙度RMS仅为0.47nm.
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