欢迎登录材料期刊网

材料期刊网

高级检索

论述了非晶硅薄膜的几种主要再结晶技术,着重指出了各种晶化技术已取得的研究成果、优缺点、有待进一步研究的内容及其在多晶硅薄膜太阳电池工业生产中的应用前景.另外,还讨论了通过Raman光谱求纳晶硅薄膜的晶粒尺寸和结晶度的方法.

参考文献

[1] 杜开瑛;饶海波 .由低温退火轻掺杂控制a-Si:H膜的固相晶化成核[J].物理学报,1994,43(06):966-977.
[2] 姚若河;林璇英;吴萍 等.PCVD法制备多晶硅薄膜中退火过程的研究[J].功能材料,1998,10(zk):449-450.
[3] S Hasegawa;S Sakamoto;T Inokuma et al.Structure of recrystallized silicon films prepared from amorphous silicon deposited using disilane[J].Applied Physics Letters,1993,62(11):1218-1220.
[4] A T Voutsas;M K Hatalis;J Boyce et al.Raman spectroscopy of amorphous and microcrystalline silicon films deposited by lowpressure chemical vapor deposition[J].Journal of Applied Physics,1996,73(12):6999-7006.
[5] T Matsuyama et al.High-quality polycrystalline silicon thin film prepared by a solid phase crystallization method[J].Journal of Non-Crystalline Solids,1996,198-200:940-944.
[6] Ruichun Wang;Piyi Du;Ge Shen;Wenjian Weng;Gaorong Han .Study on Al-induced crystallization of Al/a-Si:H bilayer thin film[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1/2):225-229.
[7] Oliver Nast;Andreas J. Hartmann .Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon[J].Journal of Applied Physics,2000(2):716-724.
[8] Hyeongnam kim;Daewon kim;Gyuyul Lee et al.Polycrystalline Si films formed by Al-induced crystallization with and without Sl oxides at Al/a-Si interface[J].Solar Energy Materials and Solar Cells,2002,74:323-329.
[9] Xin Zhang;Tong-Yi Zhang;Man Wong .Residual-stress relaxation in polysilicon thin films by high-temperature rapid thermal annealing[J].Sensors and Actuators, A. Physical,1998(1/3):109-115.
[10] Singh R.;Poole KF.;Fakhruddin M. .Rapid photothermal processing as a semiconductor manufacturing technology for the 21st century[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2000(1/4):198-203.
[11] Jia S.;Geng XH.;Wang ZP.;Ge HC. .Preparation of thin film polycrystalline silicon on glass by photo-thermal annealing[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2000(1/2):201-205.
[12] 薛清;郁伟中;黄远明 .利用快速退火从非晶硅薄膜中生长纳米硅晶粒[J].物理实验,22(08):17-20.
[13] Mcmillan J M;Peterson E M .Kinectics of decomposition of amorphous hydrogenated silicon films[J].Journal of Applied Physics,1997,50:5238-5243.
[14] 廖燕平,黄金英,郜峰利,邵喜斌,付国柱,荆海,缪国庆.激光晶化多晶硅的制备与XRD谱[J].吉林大学学报(理学版),2004(01):99-102.
[15] George Turrell;Jacques Corset.Raman Microscopy Development and Application[M].Academic Press,1996:39.
[16] 程光照.拉曼布里渊散射-原理及应用[M].北京:科学出版社,2001:245.
[17] Jian Zi;H Buscher;C Falter et al.Raman shifts in Si nanocrystals[J].Applied Physics Letters,1998,69:200-202.
[18] ToshikiKaneko;Ken-ichi Onisawa;Masatoshi Wakagi et al.Crystalline fraction of microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition pulsed silane flow[J].Japanese Journal of Applied Physics,1993,32:1.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%