采用脉冲激光沉积(PLD)技术制备了Ti50Ni36Cu14合金薄膜.研究表明,PLD合金薄膜的成分与沉积距离(基片/靶间距)、激光脉冲频率有较大关系.当沉积距离(D)为20～30mm时,可获得成分均匀稳定的合金薄膜;当其它条件相同,激光脉冲频率(F)为5Hz时,合金薄膜与靶成分更为接近.采用PLD技术制备的Ti50Ni36Cu14合金薄膜成分均匀性较好,同时与磁控溅射薄膜相比PLD薄膜的平均成分更加接近靶体.采用本工艺获得的Ti50Ni36Cu14薄膜的平均成分为47.53at.%Ti、38.90 at.% Ni和13.57 at.%Cu.
参考文献
| [1] | 王跃林,王渭源.集成微光机电系统研究现况及其产业化前景[J].功能材料与器件学报,2000(01):1-6. |
| [2] | Wolf R.H.;Heuer A.H. .TiNi (shape memory) films silicon for MEMS applications[J].Journal of Microelectromechanical Systems: A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems,1995(4):206-212. |
| [3] | Krulevitch P.;Makowiecki DM.;Lee AP.;Northrup MA.;Johnson GC.;Ramsey PB. .MIXED-SPUTTER DEPOSITION OF NI-TI-CU SHAPE MEMORY FILMS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1996(1/2):101-105. |
| [4] | Krulevitch P.;Lee A.P. .Thin film shape memory alloy microactuators[J].Journal of Microelectromechanical Systems: A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems,1996(4):270-282. |
| [5] | Matsunaga T;Kajiwara S;Ogawa K et al.[J].Acta Materialia,2001,49(11):1921-1928. |
| [6] | S. K. Wu;Y. S. Chen;J. Z. Chen .Composition control of r.f.-sputtered Ti{sub}50Ni{sub}40Cu{sub}10 thin films using optical emission spectroscopy[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1):61-66. |
| [7] | F Takeda;T Yamazaki;T Nakajima .[J].Japanese Journal of Applied Physics,2000,39:5992-5994. |
| [8] | H. D. Gu;K. M. Leung;C. Y. Chung .Growth of high-temperature NiTi{sub}(1-x)Hf{sub}x shape memory alloy thin films by laser ablation of composite targets[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1998(6):3420-3422. |
| [9] | L C Chen.Particulates generated by pulsed laser ablation[A].Wiley,New York,1994:o167-198. |
| [10] | 李美成;杨建平;王青 等.[J].真空与低温,2000,6(02):63-70. |
| [11] | 李贻杰.准分子激光蒸发--一种新型的镀膜技术[J].物理,1993(03):174. |
| [12] | PatrickSurled;Catherine Clerc;Bruno Le Pioufle;Hiroyuki Fujita[J] .[J].Japanese Journal of Applied Physics,1999,38:1547-1549. |
| [13] | M H Ren;L Wang;D Xu;BCCai .[J].Materials & Design,2000,21:583-586. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%