采用Sol-Gel法制备了P2O5-SiO2快质子导电玻璃,用四探针薄层电阻测试仪、XRD、IR等手段对玻璃的电性能、物相结构和组成进行了表征,并探讨了质子导电机理.结果表明P2O5-SiO2快质子导电玻璃中的强氢键、分子水、结构的不完整性是导致高质子导电率的主要原因.
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