氢退火对掺氮硅中氧施主电学行为的影响

1.浙江大学硅材料国家重点实验室,浙江,杭州,310027

2.浙江大学硅材料国家重点实验室,浙江,杭州,310027

3.浙江大学硅材料国家重点实验室,浙江,杭州,310027

4.浙江大学硅材料国家重点实验室,浙江,杭州,310027

5.浙江大学硅材料国家重点实验室,浙江,杭州,310027

Effect of Hydrogen Anneal on Electric Behavior in NCZ Silicon

本文主要研究了在氢气下退火对掺氮直拉硅中热施主(TDs)和氮氧(N-O)复合体的影响.实验结果表明,在氢气下低温退火对热施主和N-O复合体的生成与在氩气下差不多.这说明低温氢退火注入到硅中的氢的量很少,不会对硅片的电阻率产生明显的影响.

[1]	佘思明.半导体硅材料学[M].长沙:中南工业大学出版社,1992:388-398.
[2]	Kaiser W;Frisch H L;Reiss H .[J].Physical Review,1958,112:1546.
[3]	Kimerling L C;Benton J L .[J].Applied Physics Letters,1981,39:4108.
[4]	Nakai K.;Yokota H.;Ikari A.;Takahashi J.;Tachikawa A. Kitahara K.;Ohta Y.;Ohashi W.;Inoue Y. .Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals[J].Journal of Applied Physics,2001(8):4301-4309.
[5]	杨德仁;姚鸿年 .阙端麟[J].半导体学报,1994,15:422.
[6]	Suezawa M;Sumino K;Harada H et al.[J].Japanese Journal of Applied Physics,1986(25):829.
[7]	pankove J I;Johnson N M.Hydrogen in Semiconductors and Semimetals[M].Academic,New York,1991
[8]	施天生;白国任 .[J].半导体学报,1989,10:56.
[9]	Wijaeanakula W .[J].Journal of Applied Physics,1993,73:1004.
[10]	Job R.;Ulyashin AG.;Fahrner WR. .Electronic device fabrication by simple hydrogen enhanced thermal donor formation processes in p-type Cz-silicon[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(1/3):197-202.
[11]	R Murray;A R Brown;R C Newman.[J].Materials Science and Engineering B,1989(04):299.
[12]	Binns M J;McQuaid S A;Newman R C;Lightowlers E C .[J].Semiconductor Science and Technology,1993,8:1908.

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