基于液晶折射率对温度和电场的特性,采用传输矩阵法,研究了含一缺陷层一维液晶填充光子晶体缺陷模电场和温度调控特性.研究结果表明:当温度T在273～330 K内一定时,随着垂直入射光与电场方向间夹角θ在(0,π/2)内增大,缺陷模波长向短波方向漂移,最大调控波长为37.3 nm.当夹角θ在(0,π/2)内一定时,随着外界温度T在273～330 K内升高,缺陷模波长发生改变,变化量先负后正,最大调控波长为21.9 nm.当θ=0.7505时,不管外界温度T在273～330 K内如何变化,缺陷模波长保持不变.温度对缺陷模波长的影响比垂直入射光与电场方向间夹角θ对缺陷模波长的影响更弱.
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