基于平面波展开法,以Ⅲ-Ⅴ族半导体材料AIP、AlAs、AlSb和GaP构成二维方形格子光子晶体,并对其光子晶体能态密度特性进行了数值模拟.结果表明,Ⅲ-Ⅴ族半导体材料构成二维方形格子光子晶体具有较好的光子带隙,形成的最大带隙随介电常数差值的增大而增大,f=0.2a时归一化频率达到最大光子带隙,AlSb具有较宽的光子禁带.该研究结果为光子晶体器件的研究提供了理论依据.
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