采用反应磁控溅射工艺通过改变N<,2气流量比在Si衬底上沉积300nm厚TiN薄膜.用原子力显微镜(AFM)观察薄膜表面形貌,并根据分形理论予以定量表征.结果表明:TiN薄膜的溅射模式与分形维数D<,f>值的演化存在相关性.当N<,2气流量比由O.0%增加至4.0%时,TiN薄膜的溅射方式属于金属模式,D<,f>保持不变;当N<,2气流量比继续增加至10.0%时,薄膜溅射方式转变为过渡模式,此时D<,f>急剧减小;而当N<,2气流量比超过10.0%以后,薄膜溅射模式改变为氮化物模式,相应的D<,f>轻微增加.
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