对4H-SiC雪崩光电探测器的Ti/Al/Au p型欧姆接触进行了详细的研究.通过线性传输线模型(LTLM)测得经930℃退火后欧姆接触的最小比接触电阻为5.4×10-4Ωcm2.分别用扫描电子显微镜(SEM)、俄歇电子能谱(AES)、X射线光电子能谱(XPS)和X射线衍射谱(XRD)对退火前后的表面形貌、金属之间以及金-半接触界面之间相互反应及扩散情况进行测试与分析,发现了影响欧姆接触性能的主要原因.对采用此欧姆接触制备的4H-SiC雪崩光电探测器进行测试,发现器件的击穿电压约为-55 V,此时其p型电极处的电压降仅为0.82 mV,可以满足4H-SiC雪崩光电探测器在高压下工作的需要.
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