报道了一种从氢化非晶硅薄膜中生长纳米硅粒的方法.氢化非晶硅薄膜经过不同条件的热退火处理后,用拉曼散射和X射线衍射技术对样品进行了分析.实验结果表明:在快速升温条件下所形成的nc-Si在薄膜中的分布是随机均匀的,直径在1.6～15 nm范围内,硅粒大小随退火过程中升温快慢而变化.
Nanocrystalline Si clusters can be formed in thermally annealed a-Si: H films. Using different characterizing techniques such as micro-Raman scattering, and X-ray diffraction, we have found nc-Si clusters distribute uniformly in the amorphous matrix of the annealed films with typical sizes in the range of 1.6～15 nm in diameter. The sizes of these silicon particles change sensitively with the temperature ramp rate applied during thermal annealing.
参考文献
| [1] | Xue Qing,Huang Y M.Effect of temperature-rising-rate on the sizes of nanoscale silicon particles formed in thermally annealed a-si:H films[J].Chinese Journal of Quantum Electronics (量子电子学报),2002,10(5):461-466(in Chinese). |
| [2] | Canham L T.Silicon quantum w ire array fabrication by electrochem ica1 and chemical dissolution of wafers[J].Appl.Phys.Lett.,1990,57(10):1046-1048. |
| [3] | Cullis G,Canham L T,Calcott P D J.The structural and luminescence properties of porous silicon[J].J.Appl.Phys.,1997,82(3):909-965. |
| [4] | Huang Y M.Laser light scattering characterization of particle size distribution in porous silicon[J].Solid State Commun.,1996,97(1):33-37. |
| [5] | Cheng H C,Huang C Y,Wang F S,et al.Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing[J].Jpn.J.Appl.Phys.,2000,39(LAB):LI9-L21. |
| [6] | Iqbal Z,Vepiek S,Webb A P,et al.Ram an-scattering from small particle-size polycrystalline silicon[J].Solid State Commun.,1981,37(12):993-996. |
| [7] | Cullity B D,Stock S R.Elements of X-ray Diaffraction[M].New Jersev:Prentice-Hall,2001. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%