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使用紧凑的直线平-凹腔结构,利用半导体饱和吸收片GaAs实现了二极管(LD)端面抽运Nd:GdVO4高重复频率的被动调Q 1.06μm激光运转,在8 W的泵浦功率下获得平均输出功率达0.98 W的稳定激光输出,最小脉冲宽度为60 ns.最高重复频率达240 kHz.

参考文献

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[4] Zhao S, Zhang X, Zheng J, et al. Passively Q-switched self-frequency-doubling Nd3+:GdCa4O(BOa)3 laser with GaAs saturable absorber [J]. Opt. Eng., 2002, 41(3): 559-560.
[5] Liu Qiang, Gong Mali, et al. Passive Q-switching of laser diode-pumped Nd:YVO4 laser with GaAs [J]. Acta Optica Sinica (光学学报), 2003, 23(3): 326-329 (in Chinese).
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[8] Bai Y, Wu N, et al. Passively Q-switched Nd:YVO4 laser with a Cr4+:YAG crystal saturable absorber [J]. Appl.Opt., 1997, (36): 2468-2472.
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