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Si基光电子学是为顺应二十一世纪以现代光通信和光电子计算机为主的信息科学技术发展需要,在全世界范围内迅速兴起的一个极为活跃的研究前沿.其最终目标之一是为了实现人们所期盼的全Si光电子集成电路.本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科,近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展,并预测了全Si光电子集成技术的未来发展趋势.

参考文献

[1] Peng Yingcai,Zhao Xinwei,Fu Guangsheng.Progress of Si-based nanocrystalline luminescent materials [J].Chinese Science Bulletin,2002,47(15):1233-1242.
[2] Masini G,Colace L,et al.Si based optoelectronics for communications [J].Mater.Sci.Eng.,2002,B89:2-9.
[3] Canham L,Aston R.Will a chip every day keep the doctor away? [J].Physics World,2001,27-31.
[4] Huang Meichuan,Zhang Jianli,Li Huiping,et al.Explorations on Si-based light emitting materials [J].Chinese J.Luminescence(发光学报),2002,23(5):419-424(in Chinese).
[5] Grimaldi M G,Bongiorno C,Spinella C,et al.Luminescence from β-FeSi2 precipitates in Si.Ⅰ:Morphology and epitaxial relationship [J].Phys.Rev.,2002,B66(8):085319-1-085319-10.
[6] Martinelli L,Grilli E,Migas D B,et al.Luminescence fromβ-FeSi2 precipitates in Si.Ⅱ:Origin and nature of the photoluminescence [J].Phys.Rev.,2002,B66(8):085320-1-085320-9.
[7] Zhang P,Crespi V H,Chang E,et al.Computational design of direct-band semiconductor that lattice-match silicon [J].Nature,2001,490:69-71.
[8] Tit N,Dharma-Wardana M W C.Existence of direct bandgap transition in Si/SiO2 superlattice [J].Phys.Lett.,1999,254:233-238.
[9] Rogozhina E,Belomoin G,Smith A,et al.Si-N linkage in ultrabright,ultrasmall Si nanoparticles [J].Appl.Phys.Lett.,2001,78(23):3711-3713
[10] Nishida M.Electronic structure calculations of ultrasmall Si quantum boxes:Characteristics of band-edge states [J].Phys.Rev.,2002,B66(12):125313-1-125313-10.
[11] Belomoin G,Rogozhina E,Therrien J,et al.Effects of surface termination on the band gap of ultrabright Si29nanoparticles:Experiments and computational models [J].Phys.Rev.,2002,B65(19):193406-1-193406-4.
[12] Wang Yinglong,Han Li,et al.Self-assembling growth of ordered semiconductor nanoquantum dots [J].Chinese J.Synthetic Crystals(人工晶体学报),2003,32(1):71-77(in Chinese).
[13] Li J L,Jia J F,et al.Spontaneous assembly of perfectly ordered indentical-size nanocluster arrays [J].Phys.Rev.Lett.,2002,88(6):066101-1-066101-3.
[14] Kanayama T,Miyoko O,Watanabe M,et al.Nanofabrication using structure controlled hydro genated Si clusters deposited on Si surfaces [J].J.Vac.Sci.Technol.,2000,B18(6):3497-3500.
[15] Mori H,Nagai H,Yanagawa T,et al.Formation of Ge quantum dots on boronreconstructed surface/Si(ill)[J].Mater.Sci.Eng.,2002,B89:188-190.
[16] Shi H Q,Radny M W,Smith P V.Electronic structure of the Si(111)surface [J].Phys.Rev.,2002,B66(8):085329-1-085329-8.
[17] Xu Zhenjia.Surface Science Basic of Advanced Semiconductor Materials(近代半导体材料表面科学基础)[M].Beijing:Peking University Press,2002,163-170(in Chinese).
[18] Jin G,Liu J L,Wang K L.Regimented placement of self-assembled Ge dots on selectively grown Si mesas [J].Appl.Phys.Lett.,2000,76(24):3591-3593.
[19] Vescan L,Stoica T.Luminescence of laterally ordered Ge islands along(100)directions [J].J.Appl.Phys.,2002,91(12):10119-10126.
[20] Omi H,Bottomley D J.Homma Y,et al.Shape of atomic step on Si(111)under localized stress [J].Phys.Rev.,2002,B66(8):085303-1-085303-5.
[21] Bottomley D J,Omi H,Kobayashi Y,et al.Origin of self-assembled step and terrace formation at the Si(001)-SiO2 interface [J].Phys.Rev.,2002,66(3):035301-1-035301-5.
[22] Miyazaki S,Hamamoto Y,Yoshida E,et al.Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition [J].Thin SoLid Films,2000,369:55-59.
[23] Hirano Y,Sato F,Miyazaki S,et al.Photoconductive properties of nanometer-sized Si dot multilayers [J].Appl.Phys.Lett.,2001,79(14):2255-2257
[24] Peng Yingcai,Ikeda M,Miyazaki S.Formation of self-assembly and the mechanism of Si-nanoquantum dots prepared by low pressure chemical vapor deposition [J].Chinese Acta Physica Sinica(物理学报),2003,52(12):168-173(in Chinese).
[25] Shirai H,Fujimura Y,Jung S.Formation of nanocrystalline SiLicon dot from chlorinated materials by RF plasmaenhanced chemical vapor deposition [J].Thin Solid films,2002,407:12-17.
[26] Yasuda T,Nishizawa M,Yamasaki S.Resistless pattern definition and Si selective-area deposition using an ultrathin SiO2 mask layer treated by SiHCla [J].Appl.Phys.Lett.,2000,76(22):3203-3205.
[27] Miyata N,Watanabe H,Ichikawa M.Selective growth of nanocrystalline Si dots using an ultrathin-Sioxide/oxynitride mask [J].Appl.Phys.Lett.,2000,77(11):1620-1622.
[28] Kato K,Nakasaki Y,Uda T.Atomic processes of NO oxynitridation an Si(100)surface [J].Phys.Rev.,2002,B66(7):075308-1-075308-5.
[29] Zacharias M,Heitmann J,Scholz R,et al.Size-controlled highly luminescent silicon nanocrystals:A SiO/SiO2superlattice approach [J].Appl.Phys.Lett.,2002,80(4):661-663.
[30] Miller T,Heinig K H,Moller W.Size and location control of Si nanocrystals at ion beam synthesis in thin SiO2films [J].Appl.Phys.Lett.,2002,81(16):3049-3051.
[31] Khriachtchev L,Novikov S,Lahtinen J.Thermal annealing of Si/SiO2 materials:Modification of structural and photoluminescence emission properties [J].J.Appl.Phys.,2002,92(10):5856-5862.
[32] Neshva D,Raptis C,Perakis A,et al.Raman scattering and photoluminescence from Si namoparticles in annealling SiOx thin films [J].J.Appl.Phys.,2002,92(8):4678-4683.
[33] Sui Yanping,Ma Chongyuan,et al.Fabrication of nc-Si/SiO2 multilayers and blue-light emission [J].Acta Physica Sinica(物理学报),2003,52(4):989-992(in Chinese).
[34] Usami N,Araki Y,Ito Y,et al.Modification of the growth mode of Ge on Si by buried Ge islands [J].Appl.Phys.Lett.,2000,76(25):3723-3725.
[35] Miura M,Hartmann J M,Zhang J,et al.Formation process and ordering of self-assembled Ge islands [J].Thin Solid Films,2000,369:104-107.
[36] Takamiya H,Miura M,Mitsui J,et al.Size reduction of the Ge islands by utizing the strain fields from the lower temperature grown hut-clusters buried in the matrix [J].Mater.Sci.Eng.,2002,B89:58-61.
[37] Herbst M,Schramm C,Brunner K,et al.Structural and optical properties of vertical correlated Ge island layer grown at low temperatures [J].Mater.Sci.Eng.,2002,B89:54-59.
[38] Boucaud P,Thanh V L,Yam V,et al.Aspects of Ge/Si self-assembled quantum dots [J].Mater.Sci.Eng.,2002,B89:36-44.
[39] Derivaz M,Noe P,Rouviere J L,et al.Epitaxial growth of germanium dots on silicon(001)surface covered by a very thin dielectric layer [J].Mater.Sci.Eng.,2002,B89:191-195.
[40] Leifeld O,Beyer A,Griitzmacher D,et al.Nucleation of Ge dot on the C-alloyed Si(001)surface [J].Phys.Rev.,2002,B66(12):125312-1-125312-4.
[41] Omi H,Bottomley D J,Homma Y,et al.Wafer-scale strain engineering on silicon for fabrication of ultimately confrolled nanostructures [J].Phys.Rev.,2003,B67:115302-1-115302-10.
[42] Zhao X W,Isshiki H,Aoyagi Y,et al.Formation and device application of Er-doped nanocrystalline Si using laser ablation [J].Mater.Sci.Eng.,2000,B74:197-201.
[43] Ng W L,Lourenc M A,Gwilliam R M,et al.An efficient room-temperature silicon-based light-emitting diode [J].Nature,2001,410:192-194.
[44] Takamiya H,Miura M,Usami N,et al.Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer [J].Thin Solid Film,2000,369:84-87.
[45] He Gufeng,Lin Jie,Yang,et al.Electroluminescence devices fabricated by using conjugated polymers [J].Chinese Science Bulletin(科学通报),2002,47(21):1631-1634(in Chinese).
[46] Iacona F,Pacifici D,Irrera A,et al.Electroluminescence at 1.54μm in Er-doped Si nanocluster-based edvices[J].Appl.Phys.Lett.,2002,81(17):3242-3244.
[47] Zhang Q,Filios A,et al.Ultra-stable visible electroluminescence from crystalline c-Si/O superlattice [J].Physica,2000,E8:365-368.
[48] Elkurdi M,Boucaud P,Sauvage S,et al.Near-infrared waveguide photodetector with Ge/Si self-assembled quantum dots [J].Appl.Phys.Lett.,2002,80(3):509-511.
[49] Elkurdi M,Boucaud P,Sauvage S,et al.Silicon-on-insulator waveguide photodetector with Ge/Si self-assembled islands [J].J.Appl.Phys.,2002,92(4):1858-1861.
[50] Zhao X W,Komuro S,Isshiki H,et al.Fabrication and stimulation emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation [J].Appl.Phys.Lett.,1999,74(1):120-122.
[51] Kik P G,Polman A.Exciton-erbium energy transfer in Si nanocrystal-doped SiO2 [J].Mater.Sci.Eng.,2001,B81:3-8.
[52] Iacona F,Franzo g,Moreira E C,et al.Silicon nanocrystals and Er3+ ions in an optical microcavity [J].J.Appl.Phys.,2001,89(12):8354-8356.
[53] Lopez H A,Fauchet P M.Infrared LEDS and microcavities based on erbium doped silicon nanocomposites [J].Mater.Sci.Eng.,2001,B81:91-96.
[54] Toshikiyo K,Fujii M,Hayashi S,et al.Enhanced optical properties of Si1-xGex alloy nanocrystals in a planar microcarity [J].J.Appl.Phys.,2003,93(4):2178-2181.
[55] Li Minghai,Ma Yi,et al.Formation and structure of artificial opal based on the colloidal silica sphere [J].Acta Physica Sinica(物理学报),2003,52(5):1302-1305(in Chinese).
[56] Blanco A,Chomski E,Grabtchak S,et al.Large-scale synthesis of a silicon photonic crystal with a complete three-dimensional bandgap near 1.5 micormetres [J].Nature,2000,405:437-439.
[57] Lopez H A,Fauchet M F.Erbium emission from porous silicon one-dimensional photonic bandgap structures [J].Appl.Phys.Lett.,2000,77(23):3704-3706.
[58] Viasov Y A,Bo X Z,Sturm J C,et al.On-chip natural assembly of silicon photonic bandgap crystals [J].Nature,2001,414:289-293.
[59] Pavesi L,Negro L D,Mazzoieni C,et al.Optical gain in silicon nanocrystals.Nature,2000,408:440-444.
[60] Khriachtchev L,Rasanen M.Optical gain in Si/SiO2 lattice:Experimental evidence with nanosecond pulses [J].Appl.Phys.Lett.,2001,79(9):1249-1251.
[61] Canham L.Let there be light [J].Nature,2001,409:974-976.
[62] Duan X F,Huang Y,Agarwal R,et al.Single-nanowireelectrically driven lasers [J].Nature,2003,421:241-245.
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