用TB-LMTO方法研究单层的S原子在理想的GaAs (100) 表面的化学吸附, 对GaAs(100)表面是Ga-和As-中断两种情况分别进行考虑. 计算了S原子在不同位置的吸附能、吸附体系与清洁的GaAs(100)表面的层投影态密度, 以及电子转移情况. 结果表明, 两种情况下S原子都是桥位吸附最稳定, S-Ga相互作用比S-As稍强, S钝化GaAs(100)表面可以取得明显的钝化效果.
参考文献
| [1] | Yuan Z L, Ding X M, Hu H T, et al. Investigation of Neutralized (NH4)2S Solution Passivation of GaAs(100) Surfaces [J]. Appl Phys Lett, 1997, 71(21): 3 081. |
| [2] | Lu E D, Zhang F P, Xu S H, et al. A Sulfer Passivation for GaAs Surface by an Organic Molecular, CH3CSNH2 Treatment [J]. Appl Phys Lett, 1996, 69(15): 2 282. |
| [3] | 钟战天, 罗文哲, 牟善明等. P2S5/NH4OH处理GaAs(100)表面的电子能谱研究[J]. 物理学报, 1992, 41(4): 683. |
| [4] | 陈溪莹, 曹华, 徐前江等. GaAs表面S钝化方法: S气氛辉光放电法[J ]. 半导体学报, 1996, 17(6): 476. |
| [5] | Lu Wenchang, Zhang Kaiming, Xie Xide. Adsorption of a Monolayer of Iron on β-SiC(100) Surfaces[J]. Phys Rev, 1993, B48(24): 18 159. |
| [6] | Yang Zongxian, Zhang Kaiming, Ke Sanhuang, et al. Electronic Structure of Mn on the GaAs(100) Surface [J]. Phys Rev, 1997, B56(11): 6 727. |
| [7] | Zhang X Y, Lu E D, Xu P S, et al. A Novel Sulfur-passivation Method and Magnetic Overlayers on Passivated Ⅲ-Ⅴ Semiconductor Surface[J]. Vacuum, 2000, 57(2): 145. |
| [8] | Takahisa Ohno, Kenji Shiraishi. First-principles Study of Sulfer Passivation of GaAs(001) Surface[J]. Phys Rev, 1990, B42(17): 11 194 . |
| [9] | Ke Y, Wang X W, Tan N, et al. Structural Studies of Sulfer-passivated GaAs(100) Surfaces with LEED and AFM[J]. Surface Science, 1998, 415(1-2): 29. |
| [10] | Seo J M. Potassium Reaction on Sulfur-passivated GaAs(100)[J]. Journal of Vacuum Science Technology, 2000, A18(5): 2 513. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%