利用原子吸收光谱仪(AAS)、电子扫描电镜(SEM)、电子背散射技术(EBSD)、电化学工作站等方法对不同厂家生产的铝电解电容器用电子铝箔各方面的性能进行比较和分析.结果表明,国产铝箔在微量元素设计和杂质控制,立方织构控制方面已达到国外同类产品的先进技术水平,但表面加工质量,氧化层均一性和微量元素的分布控制方面与国外存在差距.
参考文献
| [1] | 杨宏,毛卫民,钮震霖.国内外高压电解电容器用铝箔的性能比较[J].电子元件与材料,2005(11):62-65. |
| [2] | 高亢之.电解电容器用铝箔概述[J].轻合金加工技术,2000(11):9-15. |
| [3] | 杨跃.中国铝箔工业的现状与发展[J].中国金属通报,2009(21):38-39. |
| [4] | 沈行素;吴琦;蒋建新 .Fe/Si杂质含量对电解电容器低压阳极铝箔静电容量的影响[J].电子元件与材料,1995,14(01):1-7. |
| [5] | T.Suzuki;K.Arai;M.Shiga;Y.Nakamura .Impurity Effect on Cube Texture in Pure Aluminium Foils[J].Metallurgical and Materials Transactions A:Physical Metallurgy and Materials Science,1984,16:27-36. |
| [6] | Fe杂质对高纯铝箔再结晶织构及比电容的影响[J].中国有色金属学报,1999(01):19. |
| [7] | 肖仁贵,闫康平,严季新,王建中.高纯铝光箔化学成分对直流电侵蚀的影响[J].电子元件与材料,2007(08):52-54. |
| [8] | Arai K;Suxuki T;Atsumi T .Effect of trace elements on etching of aluminium electrolytic capacitor foil[J].Journal of the Electrochemical Society,1982,132(07):1667-1671. |
| [9] | Lin.W;Tu.G.C;Lin.C.F et al.The effect of lead impurity on the DC-etching Behaviour of Aluminium Foil For Electrolytic capacitor usage[J].Corrocion Science,1996,38(06):889-907. |
| [10] | S.Jingbo;M.Weimin;Y.Hong;F.Huippeng .Effect of trace Sn on corrosion behaviors of high voltage anode aluminum foil[J].Transactions of Nonferrous Metals Society of China,2008,18:879-883. |
| [11] | Lin W;Tu G C;Lin C F et al.The effect of indium inpurity on the DC-etching behavior of aluminum foil for electrolytic acpacitor usage[J].Corrosion Science,1997,39(09):1531-1543. |
| [12] | 刘楚明 .高纯铝箔形变和再结晶行为及织构的研究[D].中南大学,2007. |
| [13] | Engler O;Moo-Young H.Evolutiong of the cube texture in high purity aluminum capacitor foils by continuous recrystallization and subsequent grain growth[J].Materials Science and Engineering,1999:A271-371. |
| [14] | WU Yan,ZHAO Xiang,HE Chang-shu,ZHAO Zhi-peng,ZUO Liang,C. ESLING.Effects of electric field on recrystallization texture evolution in cold-rolled high-purity aluminum sheet during annealing[J].中国有色金属学会会刊(英文版),2007(01):143-147. |
| [15] | Alwitt R S;Uchi H;Beck T R;Alkire R C .Electrochemical tunnel etching of aluminium[J].Journal of the Electrochemical Society,1984,131(01):13-18. |
| [16] | 付成兵,肖仁贵,闫康平.电容器用铝箔隧道孔生长机理研究进展[J].电子元件与材料,2009(05):77-80. |
| [17] | Osawa N;Fukuoka K .Pit nucleation behavior of aluminium foil for electrolytic capacitors during early stage of DC etching[J].Corrosion Science,2000,42:585-597. |
| [18] | Hebert K;Alkire R.Growth and passivation of aluminum etch tunnels[J].Journal of the Electrochemical Society,1988(135):2146-2157. |
| [19] | 蔡双雨,何业东.高压阳极箔隧道枝孔的形成机理[J].电子元件与材料,2007(12):39-42. |
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