采用瞬间蒸发技术沉积了厚度为800 nm的P型Bi0.5Sb1.5Te3热电薄膜,并在373 K-573 K进行1小时的真空退火处理.利用X射线衍射(XRD)、场发射扫描电子显微镜(FESEM)和能量散射谱(EDS)分别对薄膜的物相结构、表面形貌以及化学计量比进行表征.研究了退火温度对Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数的影响,退火温度从373K增加到473K,Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数都随之增加,退火温度从523K增加到573K,薄膜的电阻率和Seebeck系数缓慢下降.当退火温度为473K时,Bi0.5Sb1.5Te3薄膜的电阻率和Seebeck系数分别为2.1 mΩcm和162 μV/K,薄膜的热电功率因子最大值为13 μW/cmK2.
参考文献
| [1] | Lon E. Bell .Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems[J].Science,2008(5895):1457-1461. |
| [2] | Chowdhury, I;Prasher, R;Lofgreen, K;Chrysler, G;Narasimhan, S;Mahajan, R;Koester, D;Alley, R;Venkatasubramanian, R .On-chip cooling by superlattice-based thin-film thermoelectrics[J].Nature nanotechnology,2009(4):235-238. |
| [3] | 王善禹,谢文杰,唐新峰.制备工艺对n型Bi2Te3基材料热电性能和抗压强度的影响[J].无机材料学报,2010(06):609-614. |
| [4] | 王晓琳,姜洪义,任卫.SPS法制备Bi2Te3基热电合金的热电性能[J].功能材料,2009(01):40-42. |
| [5] | Hicks L D;Dresselhaus M S .Effect of quantum-well structures on the thermoelectric figure of merit[J].Physical Review B,1993,47:12727-12731. |
| [6] | Optimization of thermoelectric properties on Bi_2Te_3 thin films deposited by thermal co-evaporation[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2010(10):2816. |
| [7] | Huang Baoling;Lawrence Chris;Gross Andrew .Low-temperature characterization and micropatterning of coevaporated BizTe3 and Sb2Te3 films[J].Journal of Applied Physics,2008,104:1-8. |
| [8] | Boulouz A.;Giani A.;Delannoy FP.;Boyer A.;Schumann J.;Chakraborty S. .Transport properties of V-VI semiconducting thermoelectric BiSbTe alloy thin films and their application to micromodule Peltier devices[J].Journal of Applied Physics,2001(9):5009-5014. |
| [9] | A. Li Bassi;A. Bailini;C. S. Casari;F. Donati;A. Mantegazza;M. Passoni;V. Russo;C. E. Bottani .Thermoelectric properties of Bi-Te films with controlled structure and morphology[J].Journal of Applied Physics,2009(12):124307-1-124307-9. |
| [10] | Wulf Glatz;Lukas Durrer;Etienne Schwyter;Christofer Hierold .Novel mixed method for the electrochemical deposition of thick layers of Bi{sub}(2+x)Te{sub}(3-x) with controlled stoichiometry[J].Electrochimica Acta,2008(2):755-762. |
| [11] | Hilal Kose;Mustafa Bicer;Cagla Tutunoglu;Ali Osman Aydin;Ilkay Sisman .The underpotential deposition of Bi{sub}2Te{sub}(3-y)Se{sub}y thin films by an electrochemical co-deposition method[J].Electrochimica Acta,2009(6):1680-1686. |
| [12] | Zhu W;Yang JY;Zhou DX;Mao CJ;Duan XK .Electrochemical atom-by-atom growth of highly uniform thin sheets of thermoelectric bismuth telluride via the route of ECALE[J].Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry,2008(1/2):41-48. |
| [13] | Peranio N;Eibl O;Nurnus J .Structural and thermoelectric properties of epitSially grown Bi2Te3 thin films and superlattices[J].Journal of Applied Physics,2006,100:1-10. |
| [14] | D. Bourgault;C. Giroud Garampon;N. Caillault;L. Carbone;J. A. Aymami;Caillault;L;Carbone;J;A;Aymami .Thermoelectric Properties Of N-type Bi_2te_(2.7)se_(0.3) And P-type Bi_(0.5)sb_(1.5)te_3 Thin Films Deposited By Direct Current Magnetron Sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(23):8579-8583. |
| [15] | Bertram K;Stordeur M;Heyroth F et al.Dynamic in situ observations of electrical and structural changes in thin thermoelectric (Bi0 15Sb0 85) 2Te3 films[J].Journal of Applied Physics,2009,106:1-6. |
| [16] | O. Vigil-Gala′n;F. Cruz-Gandarilla;J. Sastre′-Herna′ndez;F. Roy;E. Sa′nchez-Meza;G. Contreras-Puente .Close space vapor transport method for Bi2Te3 thin films deposition:Influence of the type of substrate[J].The journal of physics and chemistry of solids,2009(2):365-370. |
| [17] | Ferhat M;Claude Tedenae J;Nagao J .Mechanisms of spiral growth in Bi2Te3 thin films grown by the hot-wall-epitaxy technique[J].Journal of Crystal Growth,2000,218(2-4):250-258. |
| [18] | S. Budak;C.I. Muntele;R.A. Minamisawa;B. Chhay;D. Ila .Effects of MeV Si ions bombardments on thermoelectric properties of sequentially deposited Bi_xTe_3/Sb_2Te_3 nano-layers[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2007(1/2):608-611. |
| [19] | M. Takashiri;K. Miyazaki;H. Tsukamoto .Structural And Thermoelectric Properties Of Fine-grained Bi_(0.4)te_(3.0)sb_(1.6) Thin Films With Preferred Orientation Deposited By Flash Evaporation Method[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2008(18):6336-6343. |
| [20] | Duan XK;Yang JY;Xiao CJ;Zhu W .Structural and thermoelectric properties of Ag-doped Bi-2(Te0.95Se0.05)(3) thin films prepared by flash evaporation[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(19):5971-5974. |
| [21] | Tellier C R .A theoretical description of grain boundary electron scattering by an effective mean free path[J].THIN SOLID FILMS,1978,51(03):311-317. |
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