本文详细研究了采用Cl2/H2刻蚀气体时,ICP刻蚀系统对InP/InGaAsP材料表面损伤的影响.通过设计特殊结构的InP/InGaAsP多量子阱结构,测量刻蚀区域及非刻蚀区域的光荧光强度的变化,并结合高斯深度分布模型对刻蚀损伤进行定量研究.详细研究ICP刻蚀系统中的压强、ICP功率、RF功率以及Cl1/H2刻蚀气体组分对损伤程度的影响.基于这些结果优化得到一组低损伤参数,最终实现刻蚀损伤深度小于16nm.
Using Cl2/H2 as etching etchants,the surface damage of the InP/InGaAsP material in ICP etching system Was investigated.By measuring the changes of photoluminescence(PL)intensity from a specially designed InP/InGaAsP multi-quantum well(MQW)in both exposed and protected regions,and utilizing a Gaussian Depth Distribution model,the extent of damage was quantitatively analyzed.The influences of pressure,ICP power,RF power and Cl2/H2 mixing ratio of ICP system on the surface damage extent were revealed.Based on these results,a set of optimized low damage etching parameters with a less than 16 nm damage-depth was finally obtained.
参考文献
| [1] | Rahman M. .CHANNELING AND DIFFUSION IN DRY-ETCH DAMAGE[J].Journal of Applied Physics,1997(5):2215-2224. |
| [2] | L.G.Deng;M Rahman;S K Murad et al.Can dry-etching systems by designed for lower damage ab initio[J].Journal of Vacuum Science and Technology,1998,A 16(06):3334-3338. |
| [3] | J.S.Barton .The integration of Mach-Zehnder modulators with sampled grating DBR lasers[D].University of California,Santa Barbara,2004. |
| [4] | T.L.Cheeks;M.L.Roukes;A.Scherer;H.G.Craighead .Narrow conducting channels defined by helium ion beam damage[J].Applied Physics Letters,1998,53:1964-1966. |
| [5] | M.A.Foad;S Thoms;C D W Wilkinson .New technique for dry etch damage assessment of semiconductors[J].Journal of Vacuum Science and Technology,1993,B 11(01):20-25. |
| [6] | R.Germann;A.Forchel;M Bresch et al.Energy dependence and depth distribution of dry etching-induced damage in Ⅲ/Ⅴ semiconductor heterostmetures[J].Journal of Vacuum Science and Technology,1989,B 7(06):1475-1478. |
| [7] | N.G.Stoffel .Molecular dynamics simulations of deep penetration by channeled ions during low-energy ion bombardment of Ⅲ-Ⅴ semiconductors[J].Journal of Vacuum Science and Technology,1992,B 10(02):651-658. |
| [8] | Sheu J.K.;Su Y.K.;Chi G.C.;Jou M.J.;Liu C.C.;Chang C.M.;Hung W.C. .Inductively coupled plasma etching of GaN using Cl_2/Ar and Cl_2/N_2 gases[J].Journal of Applied Physics,1999(3):1970-0. |
| [9] | Yu JS.;Lee YT. .Parametric reactive ion etching of InP using Cl-2 and CH4 gases: effects of H-2 and Ar addition[J].Semiconductor Science and Technology,2002(3):230-236. |
| [10] | Nobuhiro Nunoya;Madoka Nakamura;Munehisa Tamura;Shigehisa Arai .Characterization of Etching Damage in Cl_2/H_2-Reactive-Ion-Etching of GaInAs/InP Heterostructure[J].Japanese journal of applied physics,1999(12A):6942-6946. |
| [11] | Meng Cao;Yanfeng Lao;Huizhen Wu;Cheng Liu;Zhengsheng Xie;Chunfang Cao;Huizhen Wu .Luminescence enhancement of plasma-etched InAsP/InGaAsP quantum wells[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,2008(2):219-223. |
| [12] | S.M.Lord;G Roos;J S Harris et al.Enhancement of photoluminescence intensity in InGaAs/AlxGal-xAs Quantum Wells by hydrogenation[J].Applied Physics Letters,1992,60(18):2276-2278. |
| [13] | Strasser P;Wuest R;Robin F;Erni D;Jackel H .Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP/InGaAsP[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2007(2):387-393. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%