本文采用半经验紧束缚能带理论,通过自洽计算薛定谔方程和泊松方程研究了AlN/GaN共振隧穿二极管中极化效应对电流的影响.结果发现,极化效应导致电流曲线发生不对称性,并影响电流的共振电压位置,这与实验报道的结果相一致.并且随着极化电荷的增加,在一定的偏压条件下,只能观测到一个子能级隧穿或者根本没有负微分电阻现象发生.
参考文献
| [1] | Pearton S J;Zolper J C;Shul R J et al.GaN:Processing,defects,and devices[J].Journal of Applied Physics,1999,86(01):1-78. |
| [2] | Ambacher O. .Growth and applications of Group III nitrides [Review][J].Journal of Physics, D. Applied Physics: A Europhysics Journal,1998(20):2653-2710. |
| [3] | Zhang N Q;Moran B;DenBaars S P et al.Kilovolt AlGaN/GaN HEMTs as switching devices[J].Physical Status Solidi A,2001,188(01):213-217. |
| [4] | Yu ET;Sullivan GJ;Asbeck PM;Wang CD;Qiao D;Lau SS;TIANJIN UNIV DEPT APPL PHYS TIANJIN 300072 PEOPLES R CHINA. .Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors[J].Applied physics letters,1997(19):2794-2796. |
| [5] | Kikuchi A;Bannai R;Kishino K .AlGaN resonant tunneling diodes grown by rf-MBE[J].Physical Status Solidi A,2001,188(01):187-190. |
| [6] | 李娜,赵德刚,杨辉.AlGaN/GaN异质结中极化效应的模拟[J].中国科学G辑,2004(04):422-429. |
| [7] | Vogl P;Hjalmarson H P;Dow J D .A Semi-empirical tight-binding theory of the electronic structure of semiconductors[J].Journal of Physics and Chemistry of Solids,1983,44(05):365-378. |
| [8] | Strahberger C.;Vogl P. .Model of room-temperature resonant-tunneling current in metal/insulator and insulator/insulator heterostructures[J].Physical Review.B.Condensed Matter,2000(11):7289-7297. |
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