为研究Power VDMOS中辐照引起的氧化物陷阱电荷和界面态电荷情况,用Co-60源对Pow-er MOSFET进行了总剂量的辐照实验,移位测试了器件的亚阈值曲线漂移情况,通过最大斜率线性外推法和亚阈值分离方法提取了开启电压、增益因子、迁移率、氧化物陷阱电荷和界面态电荷随辐照总剂量的漂移情况.研究结果表明:在1000krad(Si)辐照下器件开启电压漂移小于2V,迁移率退化小于20%,氧化物陷阱电荷和界面态电荷处于比较理想的状态,小于2×1011cm-2.
参考文献
| [1] | Jayant B;Baliga.Modern power devices[M].New York:A Wlley-Interscience Publication,1987:62-63. |
| [2] | 任迪远,陆妩,郭旗,余学锋,王明刚,胡浴红,赵文魁.CMOS运算放大器的辐照和退火行为[J].半导体学报,2004(06):731-734. |
| [3] | Bendada E;RaIs K .Annealing of radiation damage in MOS devices:Study by diode parameter determination[J].The European Physical Journal Applied Physics,1999,5(91):450-453. |
| [4] | WASKIEWICZ A E;GRONINGER J W .Burnout of power MOS transistors with heavy ion of californium-252[J].IEEE Transactions on Nuclear Science,1986,NS-33:1710-1713. |
| [5] | 余学峰;任迪远;张国强.用于空间环境的CMOS器件的辐照方法和加固评判研究[A].,1993:88-90. |
| [6] | Djoric-veljkovic S;Davidovie V.Analysis of Gamma-Irradiation Induced Oxide Charge and interface Trap Effects in Power VDMOSFETS[A].,1995:1259-262. |
| [7] | Zupac D;Galloway K F et al.Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs[J].IEEE Transactions on Nuclear Science,1983,40(06):1951-1956. |
| [8] | Bhat N.;Vasi J. .Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors[J].IEEE Transactions on Nuclear Science,1992(6):2230-2235. |
| [9] | McWhorter P.J.;Fleetwood D.M. .Comparison of MOS capacitor and transistor postirradiation response[J].IEEE Transactions on Nuclear Science,1989(6):1792-1799. |
| [10] | Sakai T.;Yachi T. .Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristics[J].IEEE Transactions on Electron Devices,1991(6):1510-1515. |
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