对超大规模集成电路铝互连系统中的铝通孔电迁移进行了试验分析和模拟.以通孔开路为电迁移失效判据,求出了在加速条件下互连铝通孔的电迁移寿命;基于ANSYS模拟软件平台,对铝通孔电迁移热电耦合效应进行了模拟.仿真结果表明通孔最高温度比环境温度高出9.576K,与通孔自热效应理论模型算出的结果基本一致.考虑该温度修正后通孔电迁移寿命与实际值更接近.该工作对铝通孔电迁移的研究和寿命评价具有重要的实际意义.
参考文献
[1] | 张文杰,易万兵,吴瑾.铝互连线的电迁移问题及超深亚微米技术下的挑战[J].物理学报,2006(10):5424-5434. |
[2] | Bao Z L;Timothy D S;Tom C L.Line depletion Electromigration characterization of Cu Interconnects[J].IEEE International Reliability Physics Symposium,2003:140. |
[3] | 詹郁生,郑学仁.集成电路金属互连焦耳热效应的测试与修正[J].华南理工大学学报(自然科学版),2004(05):34-37. |
[4] | Anata Y .Temperature-controlled wafer-level Joule-heated constant current EM tests of W/ Al-Cu-Si/ W wires[J].IEEE ICMTS,1994,7(03):147. |
[5] | Steenwyk S D;Kankowski E F .Electromigration in alumi-num to tantalum silicide contacts[J].IEEE Electron Devices Society and IEEE Reliability Society,1986,30(08):17-30. |
[6] | Liu H .Modeling of temperature increase due to Joule heat-ing during electromigration measurements[J].Materials Research Society,1996,42(07):113-119. |
[7] | Ying S.Joule heating effect on evaluation of lifetime in elec-tromigration experiment[A].,1998:230-233. |
[8] | Gill J;Sullivan T;YankeeA S.Investigation of Via-Dominated Multi-Modal Electromigration Failure Distri-butions in AI Interconnects with a Discussion of the Statisti-cal Implications[M].IEEE IRPS USA:Dallas,2002:298. |
[9] | Malone D W;Hummel R E .Electromigration in Integrated Circuits[J].Reviews in Solid State and Materials Sciences,1997,22(03):199-238. |
[10] | Yi-Shao Lai;Chin-Li Kao .Electrothermal coupling analysis of current crowding and Joule heating in flip-chip packages[J].Microelectronics and reliability,2006(8):1357-1368. |
[11] | 王涛,李斌,罗宏伟.高温恒定电流电迁移可靠性试验及结果分析[J].电子产品可靠性与环境试验,2004(06):49-52. |
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