建立了非对称型门极换流晶闸管器件模型,对其进行了工艺模拟和器件模拟.模拟结果表明,缓冲层与透明阳极各自区域中的杂质总量是决定GCT的通态压降的关键因素.通过协调各自区域的峰值掺杂浓度与厚度,可以合理地控制该区域的杂质总量,降低GCT的通态压降.n 基区 的寿命变化对器件的通态压降影响十分明显,辐照剂量的选取要折衷关断时间和通态压降的要求.
参考文献
| [1] | Eicher S;Bauer F;Weber A.Punchthrough Type GTO with buffer layer and homogeneous low efficiency anode structure[J].IEEE ISPSD,1996:261-264. |
| [2] | Harold M.IGCT-megawatt power switches for mediumvoltage applications[J].ABB Review,1997 |
| [3] | Sven Klaka.The Integrated Gated-Commutated Thyristor:A New High-Efficiency,High-Power Switch for Series or Snubbedess Operation[A]. |
| [4] | P. K. Steimer;H. E. Gruning;J. Werninger;E. Carroll;S. Klaka;S. Linder .IGCT-a New Emerging Technology for High Power, Low Cost Inverters[J].IEEE industry applications magazine,1999(4):12-18. |
| [5] | Christopher M S.Introduction to semiconductor device modeling[M].Singapore:World Scientific Publishing Co.Ptc.Ltd,1986:76-79. |
| [6] | Silvaco User's Manual[M].,2002 |
| [7] | Eicher S;Bauer F;Zelle H R et al.Design considerations for a 7 kV/3 kA GTO with transparent anode and bufferlayer[J].IEEE Power Electronics Specialists Conference Records,1996,1:29-34. |
| [8] | 王颖,赵春晖,曹菲,邵雷.非对称型门极换流晶闸管的优化设计[J].哈尔滨工程大学学报,2007(09):1044-1047. |
| [9] | Matsudal Tomoko;Nakagawa Akio .High voltage semiconductor device and method for manufacturing the same[P].EP 1237200A2,2002. |
| [10] | Bakowski M;Galster N;Hallen A.Proton irradiation for improved GTO thyristors[A].,1997:77-80. |
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