氢离子注入GaAs晶片表面剥离机理

功能材料与器件学报 , 2007, 13(1): 59-67. doi: 10.3969/j.issn.1007-4252.2007.01.012

氢离子注入GaAs晶片表面剥离机理

郭育林 ^1, , 倪敏璐 ^2, , 周嘉 ^3, , 竺士炀 ^4, , 黄宜平 ^5,

1.复旦大学专用集成电路及系统国家重点实验室,微电子学系,上海,200433

2.复旦大学专用集成电路及系统国家重点实验室,微电子学系,上海,200433

3.复旦大学专用集成电路及系统国家重点实验室,微电子学系,上海,200433

4.复旦大学专用集成电路及系统国家重点实验室,微电子学系,上海,200433

5.复旦大学专用集成电路及系统国家重点实验室,微电子学系,上海,200433

关键词： GaAs , 智能剥离 , 异质结构材料 , 氢离子注入

Investigation of GaAs wafer surface blistering by hydrogen implantation

为了更深入的了解GaAs经氢离子注入后的剥离特性,实验研究了GaAs晶片经6×1016 /cm2剂量氢离子以不同能量注入,再经过不同温度和不同时间的退火过程后,晶片表面的剥离情况.研究表明:注入能量小的晶片较容易表面剥离,当注入能量大到一定程度,表面将不会出现剥离的现象;在相同的注入能量情况下,GaAs晶片的表面剥离随着退火温度的升高、退火时间的增加变得更加的显著.晶片在300 ℃下退火后,未发现有剥离现象,实验发现GaAs的临界剥离温度在300-400 ℃之间.研究结果有助于优化GaAs/Si异质结构材料的智能剥离制备工艺.

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氢离子注入GaAs晶片表面剥离机理

Investigation of GaAs wafer surface blistering by hydrogen implantation

参考文献