掺硼金刚石薄膜的电化学性能

1.清华大学,摩擦学国家重点实验室,北京,100084

2.清华大学,摩擦学国家重点实验室,北京,100084

3.清华大学,摩擦学国家重点实验室,北京,100084

4.清华大学,摩擦学国家重点实验室,北京,100084

5.清华大学,摩擦学国家重点实验室,北京,100084

基金项目: 上海市科委资助项目(0123nm023)

Electrochemical properties of boron-doped diamond thin-film

利用循环伏安法,通过对比掺硼金刚石薄膜电极和铂/金刚石电极分别作为工作电极时的循环伏安曲线,分析了两种电极表现出的电化学性能差别,并利用能级理论进行了机理探讨.结果表明掺硼金刚石薄膜电极具有宽的电化学窗口(宽度约为3V)、良好的化学稳定性和极低的背景电流(接近0),是一种较有潜力的电化学电极材料.

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